A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure
نویسندگان
چکیده
منابع مشابه
Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure
In ultra-high sensitive APDs, a vibrate of temperature might bring a fatal decline of the multiplication performance. Conventional method to realize a temperature-stable APD focuses on the optimization of device structure, which has limited effects. While in this paper, a solution by reducing the carrier scattering rate based on an GaN/AlN periodically-stacked structure (PSS) APD is brought out...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4972397